AM4407 datasheet(4/8 Pages) AITSEMI

4 / 8 page

AiT Semiconductor Inc.

www.ait-ic.com

AM4407

MOSFET

-30V P-CHANNEL ENHANCEMENT MODE

REV1.0

- SEP 2010 RELEASED –

- 4 -

ELECTRICAL CHARACTERISTICS

TJ = 25°C Unless otherwise specified

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Static Parameters

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=-250μA

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250μA

-1.0

-2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=-24V,VGS=0V

-1

µA

VDS=-24V,VGS=0V

TJ=55°C

-5

Drain-source On-Resistance

RDS(ON)

VGS=-10V,ID=-12A

mΩ

VGS=-4.5V, ID=-7.5A

Forward Transconductance

Gfs

VDS=-5V,ID=-30.0A

Source-Drain Diode

Diode Forward Voltage

VSD

IS=-2.3A,VGS=0V

-0.75

-1.0

Dynamic Parameters

Total Gate Charge

VDS=-15V

VGS=4.5V

ID=-12A

Gate-Source Charge

Qgs

5.2

Gate-Drain Charge

Qgd

7.5

Input Capacitance

Ciss

VDS=-15V

VGS=0V

f=1MHz

2220

Output Capacitance

Coss

320

Reverse Transfer

Capacitance

Crss

235

Turn-On Time

td(on)

VDD=15V

VGS=-10V

ID=-5A, RG=3.3Ω

Turn-Off Time

td(off)

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