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AM4407 bảng dữ liệu(PDF) 3 Page - AiT Semiconductor Inc. |
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AM4407 bảng dữ liệu(HTML) 3 Page - AiT Semiconductor Inc. |
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3 / 8 page ![]() AiT Semiconductor Inc. www.ait-ic.com AM4407 MOSFET -30V P-CHANNEL ENHANCEMENT MODE REV1.0 - SEP 2010 RELEASED – - 3 - ABSOLUTE MAXIMUM RATINGS TA = 25°C Unless otherwise specified VDSS, Drain-Source Voltage 30V VGSS, Gate-Source Voltage ±20V ID, Continuous Drain Current, VGS=10VNOTE1 TA=25°C 12A IDM, Pulsed Drain CurrentNOTE2 30A PD, Power Dissipation TA=25°C 3.2W TA=70°C 2W TJ, Operation Junction Temperature -55/150°C TSTG, Storage Temperature Range -55/150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. NOTE2: The data tested by pulsed , pulse width≦300us , duty cycle≦2% |
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