AM4403M8VR datasheet(4/9 Pages) AITSEMI

4 / 9 page

AiT Semiconductor Inc.

www.ait-ic.com

AM4403

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

REV1.0

- FEB 2014 RELEASED -

- 4 -

ELECTRICAL CHARACTERISTICS

TA = 25℃, unless otherwise noted

Parameter

Symbol

Conditions

Min

Typ.

Max

Units

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V,IDS=-250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-16V,VGS=0V

-1

μA

TJ=85°C

-30

Gate Threshold Voltage

VGS(th)

VDS=VGS,IDS=-250μA

-0.4

-1

Gate Leakage Current

IGSS

VGS=±12V, VDS=0V

±100

Drain-Source On-state Resistance

RDS(ON)

NOTE4

VGS=-4.5V,IDS=-12.2A

mΩ

VGS=-2.5V,IDS=-7.7A

VGS=-1.8V,IDS=-3A

Diode Characteristics

Diode Forward Voltage

VSD NOTE4 ISD=-1A,VGS=0V

-0.7

-1

Reverse Recovery Time

trr NOTE5

ISD=-12.2A,

dISD/dt=100A/μs

Reverse Recovery Charge

Qrr NOTE5

Dynamic Characteristics NOTE5

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Input Capacitance

CISS

VGS=0V,

VDS=-10V,

Frequency=1.0MHz

1790

Output Capacitance

COSS

388

Reverse Transfer Capacitance

CRSS

310

Turn-on Delay Time

tD(ON)

VDD=-10V, RL=10Ω

IDS=-1A, VGEN=-10V,

RG=6Ω

Turn-on Rise Time

Turn-off Delay Time

tD(OFF)

Turn-off Fall Time

Gate Charge Characteristics NOTE3

Total Gate Charge

VDS=-10V, VGS=-4.5V,

IDS=-12.2A

Gate-Source Charge

QGS

1.2

Gate-Drain Charge

QGD

10.5

NOTE4: Pulse test; pulse width≤ 300μs, duty cycle≤ 2%.

NOTE5: Guaranteed by design, not subject to production testing.

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