AM4403M8VR datasheet(3/9 Pages) AITSEMI

3 / 9 page

AiT Semiconductor Inc.

www.ait-ic.com

AM4403

MOSFET

P-CHANNEL ENHANCEMENT MODE MOSFET

REV1.0

- FEB 2014 RELEASED -

- 3 -

ABSOLUTE MAXIMUM RATINGS

TA = 25℃, unless otherwise noted

VDSS, Drain-Source Voltage

-20V

VGSS, Gate-Source Voltage

±12V

ID NOTE1, Continuous Drain Current(VGS=-4.5V)

TA=25℃

-12.2A

TA=70℃

-9.8A

IDM NOTE1, 300μs Pulsed Drain Current(VGS=-4.5V)

-48.8A

IS NOTE1, Diode Continuous Forward Current

-3A

IASNOTE2, Avalanche Current, Single pulse (L=0.1mH)

-28A

EASNOTE2, Avalanche Energy, Single pulse (L=0.1mH)

39mJ

TJ, Maximum Junction Temperature

150℃

TSTG, Storage Temperature Range

-55℃~150℃

PD NOTE1, Maximum Power Dissipation

TA=25oC

3.1W

TA=70℃

RθJANOTE1,3, Thermal Resistance-Junction to Ambient

t ≤ 10s

40°C/W

Steady state

75°C/W

RJL, Thermal Resistance-Junction to Lead

Steady state

24°C/W

Stress beyond above listed “Absolute Maximum Ratings” may lead permanent damage to the device. These are stress ratings only and

operations of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not

implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

NOTE1: Surface Mounted on 1in2 pad area, t ≤ 10sec.

NOTE2: UIS tested and pulse width limited by maximum junction temperature 150°C (initial temperature TJ=25°C).

NOTE3: Maximum under Steady State conditions is 75 °C/W.

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