ACE17411B datasheet(3/7 Pages) ACE

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ACE17411B

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

(BR)DSS

GS = 0V, ID= -50μA

-30

Zero Gate Voltage Drain Current

DSS

DS = -3, VGS = 0V

μA

Gate Threshold Voltage

GS(TH)

GS = VDS, IDS= -250μA

-1

-1.4

Gate Leakage Current

GSS

VGS=±20V, VDS=0V

±100

Drain-Source On-state Resistance

DS(on)

GS = -10V, ID = -15A

6.6

8.5

mΩ

GS = -4.5V, ID = -10A

8.5

Forward Transconductance

gFS

VDS= -5V, ID= -10A

-20

Diode Forward Voltage

ISD= -1A , VGS=0V

-1.2

Diode Forward Current *AB

TC =25°C

-32

Switching

Total Gate Charge

VGS=-10V , ID=-1.5A

VDS=-15V,

Gate-Source Charge

7.2

Gate-Drain Charge

18.8

Turn-on Delay Time

d ( on )

VGS=-10V,VDS=-15V,

RL=30

Ω, R

G=6

24.5

Turn-on Rise Time

Turn-off Delay Time

d( off )

236

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VDS=-15V,VGS=0V,

f=200kHz

4586

Output Capacitance

Coss

448

Reverse Transfer Capacitance

Crss

406

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air

environment with TA=25°C. The value in any given application depends on the user's specific board design.

: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Package limited42A。

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