2SB772S-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB772S

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

www.unisonic.com.tw

QW-R208-002.B

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector -Base Voltage

VCBO

-40

Collector -Emitter Voltage

VCEO

-30

Emitter -Base Voltage

VEBO

-5

Peak Collector Current

ICM

-7

DC Collector Current

-3

Base Current

-0.6

Power Dissipation

1.0

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

ICBO

VCB=-30V,IE=0

-1000

Emitter Cut-Off Current

IEBO

VEB=-3V,Ic=0

-1000

DC Current Gain(Note 1)

hFE1

hFE2

VCE=-2V,Ic=-20mA

VCE=-2V,Ic=-1A

100

200

150

400

Collector-Emitter Saturation Voltage

VCE(sat)

Ic=-2A,IB=-0.2A

-0.3

-0.5

Base-Emitter Saturation Voltage

VBE(sat)

Ic=-2A,IB=-0.2A

-1.0

-2.0

Current Gain Bandwidth Product

VCE=-5V,Ic=-0.1A

MHz

Output Capacitance

Cob

VCB=-10V,IE=0,f=1MHz

Note 1: Pulse test: PW<300µs, Duty Cycle<2%

CLASSIFICATION OF hFE2

RANK

RANGE

100 ~ 200

160 ~ 320

200 ~ 400

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