BLP27M810 datasheet(3/11 Pages) AMPLEON

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BLP27M810

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Product data sheet

Rev. 1 — 11 February 2016

3 of 11

BLP27M810

Power LDMOS transistor

6. Characteristics

Table 6.

DC characteristics

Tj = 25 C; unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID =0.18 mA

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 18 mA

1.5

1.9

2.3

IDSS

drain leakage current

VGS =0V; VDS =28 V

1.4

+1.4

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75V

3.2

IGSS

gate leakage current

VGS =11 V; VDS =0V

140

gfs

forward transconductance

VDS =10V; ID =18 mA

160

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) +3.75V;

VDS =10V; ID =630 mA

1000 -



Table 7.

RF characteristics

A derivative functional RF test is performed in production. The performance as mentioned below is

verified by design and characterization in an Ampleon class-AB application board.

Test signal: pulsed CW;

 = 10%; tp = 100 s; VDS = 28 V; IDq = 110 mA; Tcase = 25 C; f = 2140 MHz

Symbol Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL(AV) =2W

D

drain efficiency

PL(AV) =2W

PL(1dB)

output power at 1 dB gain compression

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