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PPC5604BAMLL4R bảng dữ liệu(PDF) 60 Page - NXP Semiconductors

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MPC5604B/C Microcontroller Data Sheet, Rev. 15
Package pinouts and signal descriptions
NXP Semiconductors
60
ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability
results. Some units will experience single bit corrections throughout the life of the product with no impact
to product reliability.
2.19.2
Flash power supply DC characteristics
Table 31 shows the power supply DC characteristics on external supply.
Table 29. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles
per block over the operating
temperature range (TJ)
16 KB blocks
100,000
cycles
32 KB blocks
10,000 100,000
128 KB blocks
1,000
100,000
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
Blocks with
0–1,000 P/E cycles
20
years
Blocks with
1,001–10,000 P/E cycles
10
Blocks with
10,001–100,000 P/E cycles
5—
Table 30. Flash read access timing
Symbol
C
Parameter
Conditions1
1 V
DD = 3.3 V ± 10% / 5.0 V ± 10%, TA = −40 to 125 °C, unless otherwise specified
Max
Unit
fREAD
CC
P Maximum frequency for Flash reading
2 wait states
64
MHz
C
1 wait state
40
C
0 wait states
20
Table 31. Flash memory power supply DC electrical characteristics
Symbol
C
Parameter
Conditions1
Value
Unit
Min
Typ
Max
IFREAD
2 CC D Sum of the current consumption on
VDD_HV and VDD_BV on read access
Code flash memory module read
fCPU = 64 MHz
3
—15
33
mA
Data flash memory module read
fCPU = 64 MHz
3
—15
33



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