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ADE1201 bảng dữ liệu(PDF) 23 Page - Analog Devices |
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ADE1201 bảng dữ liệu(HTML) 23 Page - Analog Devices |
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23 / 40 page ![]() Data Sheet ADE1201 Rev. 0 | Page 23 of 40 GATE DRIVE The GATE pin is used to drive an external high voltage enhancement mode FET, Q1. After power-up, the GATE pin is biased at VGATENOM to allow Q1 to conduct the constant current while protecting the LOAD1 pin, as shown in Figure 34. One 10 Ω, external, gate current limiting resistor (R13), and a 0.1 µF gate capacitor (C5) are required for stability. Table 1 shows the nominal VGATENOM voltage (see Figure 34). During a pulsed current, VGATENOM is regulated to reduce the voltage on the LOAD1 pin to minimize on-chip power consumption. When the external FET is conducting, the corresponding LOAD1 pin (VGS) is at 0.6 V. After a pulsed current period, the GATE voltage is regulated back to VGATENOM. The ADE1201 is compatible with FETs with a maximum VGS of 6 V. Q1 E5 FB GATE IN1 R13 LOAD1 10Ω C3 0.1µF C5 0.1µF V2 ADE1201 GNDF MOV 275VAC/350VDC D1 + – ~ ~ R4 E3 10Ω FB R5 E4 10Ω FB C2 10nF VGS R12 1.1kΩ 1nF C6 ≤300V R1 95.3kΩ R2 95.3kΩ R3 95.3kΩ Figure 34. FET Gate Control |
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