MF1P2131DA4SLASH02 datasheet(25/33 Pages) NXP

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NXP Semiconductors

MF1P(H)x1y1

MIFARE Plus EV1

MF1P(H)x1y1

All information provided in this document is subject to legal disclaimers.

Product short data sheet

Rev. 3.2 — 6 December 2018

COMPANY PUBLIC

366932

25 / 33

10 Limiting values

Stresses above one or more of the limiting values may cause permanent damage to the

device. Exposure to limiting values for extended periods may affect device reliability.

Table 9. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Min

Max

Unit

input current

Ptot/pack

total power dissipation per package

200

Tstg

storage temperature

-55

125

°C

Tamb

ambient temperature

-25

°C

VESD

electrostatic discharge voltage on LA/LB [1]

[1]

ANSI/ESDA/JEDEC JS-001; Human body model

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe

precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,

JESD625-A or equivalent standards.

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