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STM32L031C6 bảng dữ liệu(PDF) 57 Page - STMicroelectronics |
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STM32L031C6 bảng dữ liệu(HTML) 57 Page - STMicroelectronics |
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57 / 126 page ![]() DS10668 Rev 6 57/126 STM32L031x4/6 Electrical characteristics 96 Table 24. Current consumption in Run mode, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Max(1) Unit IDD (Run from Flash) Supply current in Run mode, code executed from Flash fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL on)(2) Range 3, VCORE = 1.2 V VOS[1:0] = 11 1 MHz 140 200 µA 2 MHz 245 310 4MHz 460 540 Range 2, VCORE = 1.5 V, VOS[1:0] = 10, 4 MHz 0.56 0.63 mA 8 MHz 1.1 1.2 16 MHz 2.1 2.3 Range 1, VCORE = 1.8 V, VOS[1:0] = 01 8 MHz 1.25 1.4 16 MHz 2.5 2.7 32 MHz 5 5.6 HSI clock Range 2, VCORE = 1.5 V, VOS[1:0] = 10, 16 MHz 2.1 2.4 Range 1, VCORE = 1.8 V, VOS[1:0] = 01 32 MHz 5.1 5.7 MSI clock Range 3, VCORE = 1.2 V, VOS[1:0] = 11 65 kHz 34.5 110 µA 524 kHz 86 150 4.2 MHz 505 570 1. Guaranteed by characterization results at 125 °C, unless otherwise specified. 2. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). Table 25. Current consumption in Run mode vs code type, code with data processing running from Flash memory Symbol Parameter Conditions fHCLK Typ Unit IDD (Run from Flash) Supply current in Run mode, code executed from Flash memory fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(1) Range 3, VCORE=1.2 V, VOS[1:0] = 11 Dhrystone 4 MHz 460 µA CoreMark 455 Fibonacci 330 while(1) 305 while(1), prefetch OFF 320 Range 1, VOS[1:0] = 01, VCORE = 1.8 V Dhrystone 32 MHz 5 mA CoreMark 5.15 Fibonacci 5 while(1) 4.35 while(1), prefetch OFF 3.85 1. Oscillator bypassed (HSEBYP = 1 in RCC_CR register). |
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