Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

11

A

Source-drain current (pulsed)

-

44

A

Forward on voltage

-

1.6

V

Reverse recovery time

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

-

90

ns

Reverse recovery charge

-

252

nC

Reverse recovery current

-

5.6

A

Reverse recovery time

for inductive load switching and diode

recovery times)

-

170

ns

Reverse recovery charge

-

667

nC

Reverse recovery current

-

8.6

A

1. Pulse width is limited by safe operating area.

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

±30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for

additional external componentry.

STP13N60DM2

Electrical characteristics

DS12837 - Rev 1

page 4/13