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STM8S007C8 bảng dữ liệu(PDF) 60 Page - STMicroelectronics

tên linh kiện STM8S007C8
Giải thích chi tiết về linh kiện  Value line, 24 MHz STM8S 8-bit MCU, 64 Kbytes Flash, true data EEPROM, 10-bit ADC, timers, 2 UARTs, SPI, I²C
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STM8S007C8 bảng dữ liệu(HTML) 60 Page - STMicroelectronics

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Electrical characteristics
STM8S007C8
60/93
DS8633 Rev 6
9.3.5
Memory characteristics
RAM and hardware registers
Flash program memory and data EEPROM
General conditions: TA = -40 to 85 °C.
Table 33. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
registers (only in halt mode). Guaranteed by design.
Halt mode (or reset)
VIT-max(2)
2. Refer to Table 17 on page 47 for the value of VIT-max.
V
Table 34. Flash program memory and data EEPROM
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by characterization results.
Typ
Max
Unit
VDD
Operating voltage
(all modes, execution/write/erase)
fCPU ≤ 16 MHz
2.95
-
5.5
V
tprog
Standard programming time (including
erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
--
6.0
6.6
ms
Fast programming time for 1 block
(128 bytes)
--
3.0
3.3
ms
terase
Erase time for 1 block (128 bytes)
-
-
3.0
3.3
ms
NRW
Erase/write cycles(2)
(program memory)
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
write/erase operation addresses a single byte.
TA = 85 °C
100
-
-
cycles
Erase/write cycles(2)
(data memory)
100 k
-
-
tRET
Data retention (program memory)
after 100 erase/write cycles at
TA = 85 °C
TRET = 55° C
20
-
-
years
Data retention (data memory) after
10 k erase/write cycles at TA = 85 °C
20
-
-
Data retention (data memory) after
100 k erase/write cycles at TA = 85 °C
TRET = 85° C
1.0
-
-
IDD
Supply current (Flash programming or
erasing for 1 to 128 bytes)
--
2.0
-
mA



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