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ST25DV04KC bảng dữ liệu(PDF) 40 Page - STMicroelectronics |
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ST25DV04KC bảng dữ liệu(HTML) 40 Page - STMicroelectronics |
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40 / 203 page ![]() RF_WRITE: • When RF_WRITE is activated, a pulse of duration IT_TIME is emitted at completion of a valid RF write operation in EEPROM (after EOF of ST25DVxxKC response). • Following commands trigger the RF_WRITE interrupt after a valid write operation in EEPROM: – Write Single Block – Extended Write Single Block – Write Multiple Block – Extended Write Multiple Block – Lock Block – Extended Lock Block – Write AFI – Lock AFI – Write DSFID – Lock DSFID – Write Configuration – Write Password • Note that writing in dynamic registers or fast transfer mode mailbox does not trigger RF_WRITE interrupt (no write operation in EEPROM). Figure 23. RF_WRITE chronogram 1) VCD sends a write command and ST25DVxxKC replies after write completed. GPO/RF_WRITE generates a pulse during IT_TIME after ST25DVxxKC response. S O F E O F 5) VCD sends any command and ST25DV GPO/RF_ stays quiet (command not for this VICC, or quiet state). RF_ACTIVITY remains high-Z. (m*)Wt VCD Command GPO/RF_WRITE GPO/RF_WRITE (OD) S O F E O F ST25DVxxKC reply S O F Write command E O F 3) VCD sends a write command and ST25DV GPO/RF_ replies with error. GPO/RF_WRITE remains high-Z. t1 GPO/RF_WRITE S O F E O F ST25DVxxKC reply S O F Write command E O F 2) VCD sends a write command with option flag set to 1, and ST25DVxxKC replies after receiving EOF. GPO/RF_WRITE generates a pulse during IT_TIME after ST25DV response. >(m*)Wt GPO/RF_WRITE S O F E O F ST25DVxxKC reply S O F Write command E O F E O F t1 4) VCD sends any other command than a write command. GPO/RF_WRITE remains high-Z. t1 GPO/RF_WRITE S O F E O F ST25DVxxKC reply S O F Any other command E O F ST25DV04KC ST25DV16KC ST25DV64KC GPO DS13519 - Rev 3 page 40/203 |
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