PP2G10AS datasheet(1/4 Pages) NIKOSEM

tên linh kiện	PP2G10AS

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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REV 1.1

1

K-47-5

N-Channel Enhancement Mode

Field Effect Transistor

PP2G10AS

TO-263

Halogen-Free & Lead-Free

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

TC = 25 ° C

ID

180

A

TC = 100 ° C

127

Pulsed Drain Current

1

IDM

500

Avalanche Current

IAS

37.9

Avalanche Energy

L = 1mH

EAS

718

mJ

Power Dissipation

TC = 25 ° C

PD

187

W

TC = 100 ° C

93

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 175

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

0.8

° C / W

Junction-to-Ambient

RJA

50

1Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

100

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2

2.8

4

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±20V

±100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100V, VGS = 0V

1

A

VDS = 100V, VGS = 0V, TJ = 125 ° C

100

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

100V

2.7mΩ

180A

G

D

S

Số phần tương tự - PP2G10AS

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NIKO SEMICONDUCTOR CO.,...	PP2G10AT	249Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor REV 1.0

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Mô tả tương tự - PP2G10AS

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PP2G10AS bảng dữ liệu(PDF) 1 Page - NIKO SEMICONDUCTOR CO., LTD.

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