AOL1418 datasheet(1/5 Pages) AOSMD

tên linh kiện	AOL1418

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

nhà sản xuất	AOSMD [Alpha & Omega Semiconductors]

Trang chủ	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

19.5

25

48

60

RθJC

1

1.5

15

TA=70°C

12

A

Repetitive avalanche energy L=0.3mH

C

135

mJ

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Case

C

Steady-State

Continuous Drain

Current

G

TA=25°C

IDSM

TA=25°C

PDSM

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Pulsed Drain Current

Power Dissipation

B

TC=25°C

A

ID

Maximum Junction-to-Ambient

A

Steady-State

85

70

200

Avalanche Current

C

30

Power Dissipation

A

2.5

W

Continuous Drain

Current

B

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

30

TA=70°C

1.6

W

Junction and Storage Temperature Range

PD

°C

100

50

-55 to 175

TC=100°C

AOL1418

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 6.5mΩ (VGS = 10V)

RDS(ON) < 10.5mΩ (VGS = 4.5V)

General Description

The AOL1418 uses advanced trench technology to

provide excellent RDS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

Standard Product AOL1418 is Pb-free (meets ROHS

& Sony 259 specifications). AOL1418L is a Green

Product ordering option. AOL1418 and AOL1418L

are electrically identical.

G

D

S

Ultra

SO-8

TM Top View

Bottom tab

connected to

drain

Fits SOIC8

footprint !

S

G

D

Alpha & Omega Semiconductor, Ltd.

Số phần tương tự - AOL1418

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