AOB430 datasheet(1/5 Pages) AOSMD

tên linh kiện	AOB430

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

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Trang chủ	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

11.2

13.5

50

60

RθJC

2.5

3

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

Steady-State

°C/W

Maximum Junction-to-Ambient

A

W

TC=100°C

25

Junction and Storage Temperature Range

-55 to 175

°C

Power Dissipation

B

TC=25°C

PD

50

Avalanche Current

C

12

A

Repetitive avalanche energy L=0.1mH

C

23

mJ

A

TC=100°C

12

Pulsed Drain Current

C

30

Continuous Drain

Current

G

TC=25°C

ID

12

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Units

t ≤ 10s

RθJA

°C/W

Power Dissipation

A

TA=25°C

PDSM

2

W

TA=70°C

1.3

AOB430

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 60V

ID = 12A (Vgs=10V)

RDS(ON) < 63 mΩ (VGS =10V)

RDS(ON) < 85 mΩ (VGS = 6V)

General Description

The AOB430 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate

charge. This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications. Standard product AOB430 is

Pb-free (meets ROHS & Sony 259 specifications).

AOB430L is a Green Product ordering option.

AOB430 and AOB430L are electrically identical.

G

D

S

G

D

S

TO-263

D2-PAK

Top View

Drain Connected to

Tab

Alpha Omega Semiconductor, Ltd.

Số phần tương tự - AOB430

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AOB430 bảng dữ liệu(PDF) 1 Page - Alpha & Omega Semiconductors

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Số phần tương tự - AOB430

Mô tả tương tự - AOB430

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