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STM32H750VB bảng dữ liệu(PDF) 226 Page - STMicroelectronics

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Electrical characteristics (rev V)
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
226/334
DS12556 Rev 5
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 70. Typical application with a 32.768 kHz crystal
1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
7.3.9
Internal clock source characteristics
The parameters given in Table 141 to Table 144 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 120: General
operating conditions.
48 MHz high-speed internal RC oscillator (HSI48)
ai17531c
STM32
OSC32_OUT
fHSE
CL1
RF
32.768 kHz
resonator
Bias
controlled
gain
OSC32_IN
CL2
Resonator with
integrated capacitors
Table 141. HSI48 oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI48
HSI48 frequency
VDD=3.3 V,
TJ=30 °C
47.5(1)
48
48.5(1) MHz
TRIM(2)
USER trimming step
-
-
0.175
-
%
USER TRIM
COVERAGE(3)
USER TRIMMING Coverage
± 32 steps
±4.79
±5.60
-
%
DuCy(HSI48)(2)
Duty Cycle
-
45
-
55
%
ACCHSI48_REL(3)(4)
Accuracy of the HSI48 oscillator over
temperature (factory calibrated)
TJ=-40 to 125 °C
–4.5
-
3.5
%
∆VDD(HSI48)(3)
HSI48 oscillator frequency drift with
VDD(5)
VDD=3 to 3.6 V
-
0.025
0.05
%
VDD=1.62 V to 3.6 V
-
0.05
0.1
tsu(HSI48)(2)
HSI48 oscillator start-up time
-
-
2.1
4.0
µs
IDD(HSI48)(2)
HSI48 oscillator power consumption
-
-
350
400
µA
NT jitter
Next transition jitter
Accumulated jitter on 28 cycles(6)
-
-
± 0.15
-
ns
PT jitter
Paired transition jitter
Accumulated jitter on 56 cycles(6)
-
-
± 0.25
-
ns
1. Guaranteed by test in production.
2. Guaranteed by design.
3. Guaranteed by characterization.
4.
ΔfHSI = ACCHSI48_REL + ΔVDD.



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