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STM32H750VB bảng dữ liệu(PDF) 208 Page - STMicroelectronics

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Electrical characteristics (rev V)
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
208/334
DS12556 Rev 5
7.3.5
Embedded reference voltage
The parameters given in Table 125 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 120: General
operating conditions.
VAVM_0
Analog voltage detector for
VDDA threshold 0
Rising edge
1.66
1.71
1.76
V
Falling edge
1.56
1.61
1.66
VAVM_1
Analog voltage detector for
VDDA threshold 1
Rising edge
2.06
2.12
2.19
Falling edge
1.96
2.02
2.08
VAVM_2
Analog voltage detector for
VDDA threshold 2
Rising edge
2.42
2.50
2.58
Falling edge
2.35
2.42
2.49
VAVM_3
Analog voltage detector for
VDDA threshold 3
Rising edge
2.74
2.83
2.91
Falling edge
2.64
2.72
2.80
Vhyst_VDDA
Hysteresis of VDDA voltage
detector
-
-
100
-
mV
IDD_PVM
PVM consumption from
VDD(1)
--
-
0.25
µA
IDD_VDDA
Voltage detector
consumption on VDDA(1)
Resistor bridge
-
-
2.5
µA
1. Guaranteed by design.
2. BOR0 is enabled in all modes and its consumption is therefore included in the supply current characteristics tables (refer to
Section 7.3.6: Supply current characteristics).
Table 124. Reset and power control block characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 125. Embedded reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT
Internal reference voltages
-40°C < TJ < 125 °C,
VDD = 3.3 V
1.180
1.216
1.255
V
tS_vrefint(1)(2)
ADC sampling time when
reading the internal reference
voltage
-4.3
-
-
µs
tS_vbat(1)(2)
VBAT sampling time when
reading the internal VBAT
reference voltage
-9
-
-
Irefbuf(2)
Reference Buffer
consumption for ADC
VDDA=3.3 V
9
13.5
23
µA
ΔVREFINT
(2)
Internal reference voltage
spread over the temperature
range
-40°C < TJ < 125 °C
-
5
15
mV
Tcoeff(2)
Average temperature
coefficient
Average temperature
coefficient
-20
70
ppm/°C
VDDcoeff(2)
Average Voltage coefficient
3.0V < VDD < 3.6V
-
10
1370
ppm/V



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