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STM32H750VB bảng dữ liệu(PDF) 115 Page - STMicroelectronics

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STM32H750VB bảng dữ liệu(HTML) 115 Page - STMicroelectronics

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DS12556 Rev 5
115/334
STM32H750VB STM32H750ZB STM32H750IB STM32H750XB
Electrical characteristics (rev Y)
311
6.3.7
Wakeup time from low-power modes
The wakeup times given in Table 39 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
For Stop or Sleep modes: the wakeup event is WFE.
WKUP (PC1) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD=3.3 V.
Table 39. Low-power mode wakeup timings
Symbol
Parameter
Conditions
Typ(1)
Max(1)
Unit
tWUSLEEP(2)
Wakeup from Sleep
-
9
10
CPU
clock
cycles
tWUSTOP(2)
Wakeup from Stop
VOS3, HSI, Flash memory in normal mode
4.4
5.6
µs
VOS3, HSI, Flash memory in low-power
mode
12
15
VOS4, HSI, Flash memory in normal mode
15
20
VOS4, HSI, Flash memory in low-power
mode
23
28
VOS5, HSI, Flash memory in normal mode
30
71
VOS5, HSI, Flash memory in low-power
mode
38
47
VOS3, CSI, Flash memory in normal mode
27
37
VOS3, CSI, Flash memory in low power
mode
36
50
VOS4, CSI, Flash memory in normal mode
38
48
VOS4, CSI, Flash memory in low-power
mode
47
61
VOS5, CSI, Flash memory in normal mode
52
64
VOS5, CSI, Flash memory in low-power
mode
62
77
tWUSTOP2(2)
Wakeup from Stop,
clock kept running
VOS3, HSI, Flash memory in normal mode
2.6
3.4
VOS3, CSI, Flash memory in normal mode
26
36
tWUSTDBY(2)
Wakeup from Standby
mode
-
390
500
1. Guaranteed by characterization results.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.



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