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INA818 bảng dữ liệu(PDF) 4 Page - Texas Instruments

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tên linh kiện INA818
Giải thích chi tiết về linh kiện  INA823 Precision, Low-Power, Wide-Supply (2.7-V to 36-V) Instrumentation Amplifier
PDF  33 Pages
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Trang chủ  http://www.ti.com
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
VS
–VS, +VS pins voltage
Dual supply, VS = (+VS) – (–VS)
± 20
V
Single supply, VS = (+VS)
40
IN pins voltage
(–VS) – 60
(+VS) + 60
V
RG, REF, OUT pins voltage
(–VS) – 0.5
(+VS) + 0.5
V
RG pins current
–10
10
mA
OUT pin current
–50
50
mA
ISC
Output short-circuit current(2)
Continuous
TA
Operating temperature
–50
150
°C
TJ
Junction temperature
175
°C
Tstg
Storage temperature
–65
150
°C
(1)
Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2)
Short-circuit to VS / 2.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±750
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VS
Supply voltage
Single supply, VS = (+VS)
2.7
36
V
Dual supply, VS = (+VS) – (–VS)
±1.35
±18
TA
Specified temperature
–40
125
°C
7.4 Thermal Information
THERMAL METRIC(1)
INA823
UNIT
D (SOIC)
DGK (VSSOP)
8 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
126.7
167.5
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
67.0
60.3
°C/W
RθJB
Junction-to-board thermal resistance
70.1
88.7
°C/W
ψJT
Junction-to-top characterization parameter
18.6
7.9
°C/W
ψJB
Junction-to-board characterization parameter
69.4
87.1
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
n/a
n/a
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
INA823
SBOSA75A – JULY 2021 – REVISED JULY 2021
www.ti.com
4
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: INA823



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