FDMS86255 datasheet(3/7 Pages) ONSEMI

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FDMS86255

www.onsemi.com

ELECTRICAL CHARACTERISTICS (continued)TA = 25°C unless otherwise noted

Symbol

Unit

Max.

Typ.

Min.

Test Conditions

Parameter

SWITCHING CHARACTERISTICS

Qgs

Gate to Source Charge

−

Qgd

Gate to Drain “Miller” Charge

−

8.8

−

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD

Source to Drain Diode Forward

Voltage

VGS = 0 V, IS = 1.9 A (Note 2)

−

0.7

1.2

VGS = 0 V, IS = 10 A (Note 2)

−

0.8

1.3

trr

Reverse Recovery Time

IF = 10 A, di/dt = 100 A/ms

−

139

Qrr

Reverse Recovery Charge

−

165

264

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. RqJC is guaranteed

by design while RθCA is determined by the user’s board design.

a. 45°C/W when mounted on a 1 in2

pad of 2 oz copper.

b. 115°C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. EAS of 541 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 19 A, VDD = 150 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 60 A.

4. Pulse Id refers to Figure.11 Forward Bias Safe Operation Area.

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