FDMS86255 datasheet(5/7 Pages) ONSEMI

tên linh kiện	FDMS86255

Giải thích chi tiết về linh kiện	MOSFET ??N-Channel, Shielded Gate, POWERTRENCH

PDF	7 Pages

Scroll/Zoom	100%

nhà sản xuất	ONSEMI [ON Semiconductor]

Trang chủ	http://www.onsemi.com

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FDMS86255

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TYPICAL CHARACTERISTICS (continued) TJ = 25°C unless otherwise noted

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source

Voltage

Figure 9. Unclamped Inductive Switching

Capability

Figure 10. Maximum Continuous Drain

Current vs Case Temperature

Figure 11. Forward Bias Safe Operating Area

Figure 12. Single Pulse Maximum Power

Dissipation

Qg, GATE CHARGE (nC)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VDD = 75 V

D = 10 A

2030

4050

10000

1000

100

0.1

TC, CASE TEMPERATURE (°C)

tAV, TIME IN AVALANCHE (ms)

0.1

100 300

0.01

100

1000

100

0.1

0.01

100

700

0.1

VDS, DRAIN−SOURCE VOLTAGE (V)

t, PULSE WIDTH (sec)

20000

10000

1000

100

SINGLE PULSE

RθJC = 1.1°C/W

TC = 25°C

f = 1 MHz

VGS = 0 V

VDD = 100 V

VDD = 50 V

Ciss

Coss

Crss

100

125

150

10−5

10−4

10−3

10−2

10−1

TJ = 25°C

TJ = 100°C

TJ = 125°C

VGS = 10 V

VGS = 6 V

RθJC = 1.1°C/W

10 ms

100 ms

1 ms

10 ms

CURVE BENT TO

MEASURED DATA

SINGLE PULSE

TJ = MAX TARED

RθJC = 1.1°C/W

TC = 25°C

THIS AREA IS

LIMITED BY RDS(on)

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