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AT25SF128A bảng dữ liệu(PDF) 48 Page - Dialog Semiconductor

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Giải thích chi tiết về linh kiện  128-Mbit Serial NOR Flash Memory with Dual and Quad I/O Support
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Datasheet
28-Jun-2021
DS-AT25SF128A-168
Revision I
48
© 2021 Dialog Semiconductor
AT25SF128A
Datasheet
128-Mbit Serial NOR Flash Memory
with Dual and Quad I/O Support
8.4.6 64 kbytes Block Erase (D8h)
The 64 kbytes→ Block Erase command is for erasing the all data of the chosen block. A Write Enable command must previously
have been executed to set the WEL bit. The 64 kbytes Block Erase command is entered by driving CS low, followed by the
command code, and 3-byte address on SI. Any address inside the block is a valid address for the 64 kbytes Block Erase command.
CS must be driven low for the entire duration of the sequence.
The 64 kbytes Block Erase command sequence: CS goes low sending 64 kbytes Block Erase command 3-byte address on SI
CS goes high. CS must be driven high after the eighth bit of the last address byte has been latched in; otherwise the 64 kbytes
Block Erase command is not executed. As soon as CS is driven high, the self-timed Block Erase cycle (whose duration is tBE) is
initiated.
While the Block Erase cycle is in progress, the Status Register may be read to check the value of the Write-in-Progress (WIP)
bit. The WIP bit is 1 during the self-timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is completed, the WEL bit is reset. A 64 kbytes Block Erase command applied to a block which is protected by the Block
Protect (BP4, BP3, BP2, BP1, BP0) bits is not executed.
Figure 36: 64 kbytes Block Erase Sequence Diagram
SCK
CS
MSB
23
1
06
7
5
410 11
9
812
31
29 30
27 28
26
OPCODE
ADDRESS BITS A23-A0
High-Impedance
SO
SI
MSB
CCCCCCCC
A A
A
A A AA
A
A
AA
A



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