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Giải thích chi tiết về linh kiện  i.MX RT1170 Crossover Processors Data Sheet for Consumer Products
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i.MX RT1170 Crossover Processors Data Sheet for Consumer Products, Rev. 1, 05/2021
24
NXP Semiconductors
Electrical characteristics
4
Electrical characteristics
This section provides the device and module-level electrical characteristics for the i.MX RT1170
processors.
4.1
Chip-level conditions
This section provides the device-level electrical characteristics for the IC. See Table 7 for a quick reference
to the individual tables and sections.
4.1.1
Absolute maximum ratings
CAUTION
Stress beyond those listed under Table 8 may cause permanent damage to the device. These are stress
ratings only. Functional operation of the device at these or any other conditions beyond those indicated
under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability.
Table 8 shows the absolute maximum operating ratings.
Table 7. i.MX RT1170 chip-Level conditions
For these characteristics
Topic appears
Absolute maximum ratings
on page 24
Thermal characteristics
on page 26
Operating ranges
on page 26
Maximum supply currents
on page 29
Typical power mode supply currents
on page 30
System power and clocks
on page 36
Table 8. Absolute maximum ratings
Parameter Description
Symbol
Min
Max
Unit
Core supplies input voltage
VDD_SOC_IN
-0.3
1.2
V
Power for LPSR domain
VDD_LPSR_IN
-0.3
3.96
V
Power for DCDC
DCDC_IN
-0.3
3.96
V
Power for PLL, OSC, and LDOs
VDDA_1P8_IN
-0.3
1.98
V
Supply input voltage to Secure Non-Volatile Storage
and Real Time Clock
VDD_SNVS_IN
-0.3
3.96
V
USB VBUS supply
USB1_VBUS
USB2_VBUS
-0.3
5.6
V



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