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ACE25AB400GFMLTH bảng dữ liệu(PDF) 28 Page - ACE Technology Co., LTD.

tên linh kiện ACE25AB400GFMLTH
Giải thích chi tiết về linh kiện  Serial NOR Flash Memory 4M bits 3.0V Dual I/O Serial Flash Memory with 4KB Uniform Sector
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ACE25AB400G
Serial NOR Flash Memory 4M bits 3.0V Dual I/O Serial Flash Memory with 4KB Uniform Sector
VER 1.1
28
Electrical Characteristics
Power-On Timing
Table3. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
t
VSL
VCC(min) To CS# Low
10
us
t
PUW
Time Delay Before Write Instruction
1
10
ms
V
WI
Write Inhibit Voltage
1
2.5
V
Note: An interval of 10ms (minimum) is required between the power-down state and next power-on-reset
event.
Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The
Status Register contains 00H (all Status Register bits are 0).
Data Retention and Endurance
Parameter
Typical
Unit
Minimum Pattern Data Retention Time
20
Years
Erase/Program Endurance
100K
Cycles
Latch up Characteristics
Parameter
Min
Max
Input Voltage Respect To VSS On I/O Pins
-1.0V
VCC+1.0V
VCC Current
-100mA
100mA



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