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SM2001CSK bảng dữ liệu(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

tên linh kiện SM2001CSK
Giải thích chi tiết về linh kiện  N-Channel and P-Channel MOSFET uses advanced trench technology
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nhà sản xuất  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Trang chủ  http://www.doingter.cn/
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SM2001CSK bảng dữ liệu(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
P-Channel Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-24
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20 VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-0.6
0.9
-1.3
V
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-6A
---
45
55
mΩ
VGS=-4.5V,ID=-3A
---
53
68
GFS
Forward Transconductance
VDS=-5V, ID=-2.5A
---
13
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=-15, VGS=0V, f=1MHz
---
520
---
pF
Coss
Output Capacitance
---
130
---
Crss
Reverse Transfer Capacitance
---
70
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDD=-15V, ID=-1A,
VGS=-10 V,RG=6Ω
---
7
---
ns
tr
Rise Time
---
13
---
ns
td(off)
Turn-Off Delay Time
---
14
---
ns
tf
Fall Time
---
9
---
ns
Qg
Total Gate Charge
VGS=-15 V,VDS=-10V
ID=-5.1A
---
11
---
nC
Qgs
Gate-Source
Charge
---
2.2
---
nC
Qgd
Gate-Drain “Miller” Charge
---
3
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=-5.1A
---
---
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
SM 2001CSK



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