25N10L-TN3-R datasheet(3/5 Pages) DOINGTER

tên linh kiện	25N10L-TN3-R

Giải thích chi tiết về linh kiện	N-Channel MOSFET uses advanced SGT technology

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Symbol

Parameter

Conditions

Min

Typ

Max

Units

VSD

Source-Drain Diode Forward Voltage

VGS=0V,IS=7A

---

trr

Continuous Source Current

---

qrr

Pulsed Source Current

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Typical Characteristics： (T

C=25℃ unless otherwise noted)

ISD = 5 A

dlSD/dt = 100 A/μs

1.3

Note

Calculated continuous current based on maximum allowable junction temperature.

Repetitive rating; pulse width limited by max. junction temperature.

Pd is based on max. junction temperature, using junction-case thermal resistance.

VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 °C.

The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a

still air environment with Ta=25 °C.

5.5 V

j = 25 ℃

6 V

10 V

5 V

4 V

3.5 V

4.5 V

GS= 3V

DS, Drain-source voltage (V)

0.1

100

GS, Gate-source voltage(V)

DS= 10 V

j = 25 ℃

Figure 1, Typ. output characteristics

Figure 2 Typ. transfer characteristics

100

101

102

103

=100 KHz

GS = 0 V

DS, Drain-source voltage (V)

iss

oss

rss

0.0

2.5

5.0

7.5

10.0

D = 5 A

DS = 50 V

g, Gate charge(nC)

Figure 3, Typ. capacitances

Figure 4, Typ. gate charge

25N10L-TN3-R

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