6NM65L-TN3-R datasheet(1/7 Pages) DOINGTER

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=650V,ID=5A,RDS(ON)<0.9Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

650

V

VGS

Gate-Source Voltage

±30

V

ID

Continuous Drain Current-TC=25℃

5

A

Continuous Drain Current-TC=100℃

3

IDM

Pulsed Drain Current

1

15

dv/dt

48

V/ns

EAS

Single Pulse Avalanche Energy

2

135

mJ

IAR

2.5

mj

PD

Maximum PoPower Dissipation,

TC=25℃

49

W

Derateabove 25℃

0.39

W℃

EAR

0.4

MJ

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

D

S

G

Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =

125 °C

Avalanche current

(Note 1)

Repetitive Avalanche energy ，tAR limited by Tjmax

(Note 1)

6NM65L-TN3-R

Mô tả tương tự - 6NM65L-TN3-R

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