IXTY1R6N50P datasheet(4/4 Pages) IXYS

4 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 1R6N50P

IXTY 1R6N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Fig. 11. Capacitance

100

1000

VD S - Volts

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

00.511.5

22.5

33.5

Q G - nanoCoulombs

VDS = 250V

ID = 0.8A

IG = 10mA

Fig. 7. Input Adm ittance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

4.5

55.5

66.5

VG S - Volts

TJ = 125∫ C

∫ C

-40

∫ C

Fig. 8. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

I D - Amperes

TJ = -40∫ C

∫ C

125

∫ C

Fig. 9. Source Current vs.

Source-To-Drain Voltage

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.5

0.6

0.7

0.8

0.9

VS D - Volts

TJ = 125∫ C

TJ = 25∫ C

Fig. 12. Forw ard-Bias

Safe Operating Area

0.1

100

1000

VD S - Volts

100µs

1ms

TJ = 150∫ C

TC = 25∫ C

RDS(on) Limit

10ms

25µs

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