IXYS reserves the right to change limits, test conditions, and dimensions.

IXTP 1R6N50P

IXTY 1R6N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

0.7

1.4

S

C

iss

140

pF

C

oss

V

20

pF

C

rss

2.6

pF

t

d(on)

10

n s

t

r

V

16

ns

t

d(off)

R

25

n s

t

f

16

ns

Q

g(on)

3.9

nC

Q

gs

V

1.4

nC

Q

gd

1.3

nC

R

thJC

2.9 K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

typ.

Max.

I

S

V

1.6

A

I

SM

Repetitive

2.5

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

400

n s

V

TO-252 AA Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

2.19

2.38

0.086

0.094

A1

0.89

1.14

0.035

0.045

A2

0

0.13

0

0.005

b

0.64

0.89

0.025

0.035

b1

0.76

1.14

0.030

0.045

b2

5.21

5.46

0.205

0.215

c

0.46

0.58

0.018

0.023

c1

0.46

0.58

0.018

0.023

D

5.97

6.22

0.235

0.245

D1

4.32

5.21

0.170

0.205

E

6.35

6.73

0.250

0.265

E1

4.32

5.21

0.170

0.205

e

2.28BSC

0.090BSC

e1

4.57BSC

0.180BSC

H

9.40

10.42

0.370

0.410

L

0.51

1.02

0.020

0.040

L1

0.64

1.02

0.025

0.040

L2

0.89

1.27

0.035

0.050

L3

2.54

2.92

0.100

0.115

TO-220 Outline

Pins: 1 - Gate

2 - Drain