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VN3205 bảng dữ liệu(PDF) 1 Page - Microchip Technology

tên linh kiện VN3205
Giải thích chi tiết về linh kiện  N-Channel Enhancement-Mode Vertical DMOS FET
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nhà sản xuất  MICROCHIP [Microchip Technology]
Trang chủ  http://www.microchip.com
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2021 Microchip Technology Inc.
DS20005995A-page 1
VN3205
Features
• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain
Applications
• Motor Controls
• Converters, Amplifiers, and Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
General Description
The VN3205 Enhancement-mode (normally-off)
transistor uses a vertical DMOS structure and a
well-proven silicon-gate manufacturing process. This
combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Package Types
See Table 3-1 and Table 3-2 for pin information.
3-lead SOT-89
(Top view)
GATE
SOURCE
DRAIN
DRAIN
3-lead TO-92
(Top view)
GATE
SOURCE
DRAIN
N-Channel Enhancement-Mode Vertical DMOS FET


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