F0452CEVB datasheet(8/24 Pages) RENESAS

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F0452C Datasheet

May 5, 2020

Electrical Characteristics

Table 4.

Electrical Characteristics

See F0452C Application Circuit. Specifications apply when operated as an RX RF amplifier with VDD = +3.3V, TEPAD = +25°C, STBYx = Low,

RX output power = -10dBm, ZS = ZL = 50Ω, and EVKit trace and connector losses are de-embedded unless otherwise noted.

Parameter

Symbol

Condition

Minimum

Typical

Maximum

Units

Logic Input High Threshold

VIH

1.17[a]

Lower of

(VDD, 3.3)

Logic Input Low Threshold

VIL

-0.3

0.63

Logic Current

IIH, IIL

For each control pin

-10

µA

DC Current

IDD

2 paths in RX Mode

130

180

1 path in RX Mode

1 path in TX Mode

100

1 path in RX Mode

1 path in Standby Mode

1 path in TX Mode

1 path in Standby Mode

2 paths in Standby Mode

Gain Step

GSTEP

Gain Step Absolute Error

GSTEP_ERR

Relative to maximum gain,

over-voltage, and temperature

±0.5

Relative Phase Gain Step

GSTEP_PH

deg

Gain Step Settling Time [b]

GSTEP_SET

50% control logic to RF output

within ±0.1dB of final value

Gain Step Phase Settling Time [b]

GSTEP_PHSET

50% control logic to RF output

within ±1 degree of final value

Power ON Switching Time [b]

SWON

To RX Mode from TX Mode

50% control logic to RF output

settled to within ±0.1dB of final

value

µs

Power OFF Switching Time [b]

SWOFF

To TX Mode from RX Mode

50% control logic to RF input

settled within ±0.1dB of final

value

0.5

µs

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