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TMS320F28075PZPQ bảng dữ liệu(PDF) 76 Page - Texas Instruments |
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TMS320F28075PZPQ bảng dữ liệu(HTML) 76 Page - Texas Instruments |
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76 / 196 page ![]() 76 TMS320F28076, TMS320F28075 SPRS902I – OCTOBER 2014 – REVISED JUNE 2020 www.ti.com Submit Documentation Feedback Product Folder Links: TMS320F28076 TMS320F28075 Specifications Copyright © 2014–2020, Texas Instruments Incorporated 5.9.9.3 EMIF Electrical Data and Timing NOTE This device has one EMIF interface. In this section, EMx denotes EM1. 5.9.9.3.1 Asynchronous RAM Table 5-38 shows the EMIF asynchronous memory timing requirements. Table 5-39 shows the EMIF asynchronous memory switching characteristics. Figure 5-21 through Figure 5-24 show the EMIF asynchronous memory timing diagrams. (1) E = EMxCLK period in ns. (2) Setup before end of STROBE phase (if no extended wait states are inserted) by which EMxWAIT must be asserted to add extended wait states. Figure 5-22 and Figure 5-24 describe EMIF transactions that include extended wait states inserted during the STROBE phase. However, cycles inserted as part of this extended wait period should not be counted; the 4E requirement is to the start of where the HOLD phase would begin if there were no extended wait cycles. Table 5-38. EMIF Asynchronous Memory Timing Requirements(1) NO. MIN MAX UNIT Reads and Writes E EMIF clock period tc(SYSCLK) ns 2 tw(EM_WAIT) Pulse duration, EMxWAIT assertion and deassertion 2E ns Reads 12 tsu(EMDV-EMOEH) Setup time, EMxD[y:0] valid before EMxOE high 15 ns 13 th(EMOEH-EMDIV) Hold time, EMxD[y:0] valid after EMxOE high 0 ns 14 tsu(EMOEL-EMWAIT) Setup Time, EMxWAIT asserted before end of Strobe Phase(2) 4E+20 ns Writes 28 tsu(EMWEL-EMWAIT) Setup Time, EMxWAIT asserted before end of Strobe Phase(2) 4E+20 ns (1) TA = Turn around, RS = Read setup, RST = Read strobe, RH = Read hold, WS = Write setup, WST = Write strobe, WH = Write hold, MEWC = Maximum external wait cycles. These parameters are programmed through the Asynchronous Bank and Asynchronous Wait Cycle Configuration Registers. These support the following ranges of values: TA[4–1], RS[16–1], RST[64–4], RH[8–1], WS[16–1], WST[64–1], WH[8–1], and MEWC[1–256]. See the TMS320F2807x Microcontrollers Technical Reference Manual for more information. (2) E = EMxCLK period in ns. (3) EWC = external wait cycles determined by EMxWAIT input signal. EWC supports the following range of values. EWC[256–1]. The maximum wait time before time-out is specified by bit field MEWC in the Asynchronous Wait Cycle Configuration Register. See the TMS320F2807x Microcontrollers Technical Reference Manual for more information. Table 5-39. EMIF Asynchronous Memory Switching Characteristics(1)(2)(3) NO. PARAMETER MIN MAX UNIT Reads and Writes 1 td(TURNAROUND) Turn around time (TA)*E–3 (TA)*E+2 ns Reads 3 tc(EMRCYCLE) EMIF read cycle time (EW = 0) (RS+RST+RH)*E–3 (RS+RST+RH)*E+2 ns EMIF read cycle time (EW = 1) (RS+RST+RH+ (EWC*16))*E–3 (RS+RST+RH+ (EWC*16))*E+2 ns 4 tsu(EMCEL-EMOEL) Output setup time, EMxCS[y:2] low to EMxOE low (SS = 0) (RS)*E–3 (RS)*E+2 ns Output setup time, EMxCS[y:2] low to EMxOE low (SS = 1) –3 2 ns 5 th(EMOEH-EMCEH) Output hold time, EMxOE high to EMxCS[y:2] high (SS = 0) (RH)*E–3 (RH)*E ns Output hold time, EMxOE high to EMxCS[y:2] high (SS = 1) –3 0 ns 6 tsu(EMBAV-EMOEL) Output setup time, EMxBA[y:0] valid to EMxOE low (RS)*E–3 (RS)*E+2 ns |
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