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ZSSC3018BA2C bảng dữ liệu(PDF) 16 Page - Renesas Technology Corp

tên linh kiện ZSSC3018BA2C
Giải thích chi tiết về linh kiện  Versatile, High Resolution 18-Bit Sensor Signal Conditioner
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nhà sản xuất  RENESAS [Renesas Technology Corp]
Trang chủ  http://www.renesas.com
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ZSSC3018BA2C bảng dữ liệu(HTML) 16 Page - Renesas Technology Corp

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ZSSC3018 Datasheet
© 2020 Renesas Electronics Corporation
16
September 8, 2020
Figure 2.3 ADC Gain and Offset Setup
2.3.4 Temperature Measurement
The ZSSC3018 provides an internal temperature sensor measurement to allow compensation for temperature effects. See section 1.3 for the
temperature sensor resolution. The temperature output signal is a differential voltage that is adapted by the amplifier for the ADC input.
For temperature measurements, the respective settings are defined and programmed to the MTP by Renesas.
2.3.5 External Sensor Supply: Bridge Sensors
The ZSSC3018 provides dedicated supply pins VDDB and VSSB for resistive bridge-type sensors (AbsV_enable bit[11]=0 in SM_config
registers 12HEX or 16HEX; see section 3.6.2). The ADC reference voltages for the sensor bridge measurement are derived from these internal
voltages such that bridge supply disturbances are suppressed. The current drive ability of VDDB is limited (see IVDDB in section 1.2).
2.3.6 External Sensor: Absolute Voltage Source Sensors
As an optional alternative to a bridge sensor application, the ZSSC3018 can process signals from an absolute-voltage source sensor; e.g., a
thermopile element. The respective input type can be selected with AbsV_enable bit[11]=1 in SM_config, registers 12HEX or 16HEX. The absolute-
voltage source sensor element must be connected between the INP and INN pins; INN is internally connected to the ZSSC3018’s analog ground
(important: this is not VSSB). Do not connect VDDB and VSSB if an absolute-voltage source sensor is applied. The offset shift should be set to
maximum in this case: Shift_method = 1 and Offset = 111 in SM_config. The required gain can be determined according to the procedure
described in section 2.3.3.



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