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STM32H747AI bảng dữ liệu(PDF) 185 Page - STMicroelectronics

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DS12930 Rev 1
175/242
STM32H747xI/G
Electrical characteristics
221
6.3.21
Quad-SPI interface characteristics
Unless otherwise specified, the parameters given in Table 95 and Table 96 for QUADSPI
are derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 22: General operating conditions, with the
following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Measurement points are done at CMOS levels: 0.5VDD
IO Compensation cell activated.
HSLV activated when VDD ≤ 2.7 V
VOS level set to VOS1
Refer to Section 6.3.18: I/O port characteristics for more details on the input/output alternate
function characteristics.
The following table summarizes the parameters measured in SDR mode.
Table 94. LPSDR SDRAM Write timings(1)
1. Guaranteed by characterization results.
Symbol
Parameter
Min
Max
Unit
tw(SDCLK)
FMC_SDCLK period
2Tfmc_ker_ck – 1 2Tfmc_ker_ck+0.5
ns
td(SDCLKL _Data)
Data output valid time
-
2.5
th(SDCLKL _Data)
Data output hold time
0
-
td(SDCLKL_Add)
Address valid time
-
2.5
td(SDCLKL-SDNWE)
SDNWE valid time
-
2.5
th(SDCLKL-SDNWE)
SDNWE hold time
0
-
td(SDCLKL- SDNE)
Chip select valid time
-
3
th(SDCLKL- SDNE)
Chip select hold time
0
-
td(SDCLKL-SDNRAS)
SDNRAS valid time
-
1.5
th(SDCLKL-SDNRAS)
SDNRAS hold time
0
-
td(SDCLKL-SDNCAS)
SDNCAS valid time
-
1.5
td(SDCLKL-SDNCAS)
SDNCAS hold time
0
-
Table 95. QUADSPI characteristics in SDR mode(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Fck11/TCK
QUADSPI clock
frequency
2.7<VDD<3.6 V
CL = 20 pF
--
133
MHz
1.62<VDD<3.6 V
CL = 15 pF
--
100



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