NP90N06VLK datasheet(1/9 Pages) RENESAS

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R07DS1318EJ0200 Rev.2.00

Page 1 of 7

May 24, 2018

Data Sheet

NP90N06VLK

60 V

– 90 A – N-channel Power MOS FET

Application: Automotive

Description

NP90N06VLK is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

 Super low on-state resistance

 R

DS(on)1 = 5.3 m MAX. (VGS = 10 V, ID = 45 A)

 Low C

iss: Ciss = 4000 pF TYP. (VDS = 25 V)

 Designed for automotive application and AEC-Q101 qualified

Outline

TO-252(MP-3ZP)

Equivalent circuit

Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity

as much as possible, and quickly dissipate it once, when it has occurred.

Ordering Information

Part No.

Lead Plating

Packing

Package

NP90N06VLK-E1-AY *1

Pure Sn (Tin)

Tape 2500 p/reel

Taping (E1 type)

TO-252(MP-3ZP)

NP90N06VLK-E2-AY *1

Taping (E2 type)

Note:

*1. Pb-free (This product does not contain Pb in the external electrode)

R07DS1318EJ0200

Rev.2.00

May 24, 2018

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	NP90N06VLK	261Kb / 2P	isc N-Channel MOSFET Transistor

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