NP90N06VLK datasheet(3/9 Pages) RENESAS

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NP90N06VLK

R07DS1318EJ0200 Rev.2.00

Page 3 of 7

May 24, 2018

Electrical Characteristics (TA = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero Gate Voltage Drain Current

IDSS

A

VDS = 60 V, VGS = 0 V

Gate Leakage Current

IGSS

±10

A

VGS = ±20 V, VDS = 0 V

Gate to Source Threshold Voltage

VGS(th)

1.5

2.1

2.5

VDS = VGS, ID = 250

A

Forward Transfer Admittance 1

| yfs |

VDS = 5 V, ID = 45 A

Drain to Source On-state

Resistance 1

RDS(on)1

3.8

5.3



VGS = 10 V, ID = 45 A

RDS(on)2

4.9

8.2



VGS = 4.5 V, ID = 23 A

Input Capacitance *2

Ciss

4000

6000

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

Output Capacitance *2

Coss

360

540

Reverse Transfer Capacitance *2

Crss

110

200

Turn-on Delay Time *2

td(on)

VDD = 30 V, ID = 45 A,

VGS = 10 V,

RG = 0



Rise Time *2

Turn-off Delay Time *2

td(off)

120

Fall Time *2

Total Gate Charge *2

VDD = 48 V,

VGS = 10 V,

ID = 90 A

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Body Diode Forward Voltage 1

VF(S-D)

0.9

1.5

IF = 90 A, VGS = 0 V

Reverse Recovery Time

trr

IF = 90 A, VGS = 0 V,

di/dt = 100 A/

s

Reverse Recovery Charge

Qrr

Note:

*1. Pulsed test

Note: *2. Not subject of production test. Verified by design/characterization.

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