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DRV8434E/P bảng dữ liệu(PDF) 21 Page - Texas Instruments |
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DRV8434E/P bảng dữ liệu(HTML) 21 Page - Texas Instruments |
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21 / 48 page ![]() 7.3.3.4 Smart tune Ripple Control t BLANK t OFF t DRIVE I TRIP t BLANK t DRIVE t OFF t BLANK t DRIVE I TRIP t BLANK t DRIVE t OFF I VALLEY t OFF t OFF t BLANK t DRIVE t BLANK t DRIVE I VALLEY t BLANK t DRIVE t OFF Figure 7-8. Smart tune Ripple Control Decay Mode Smart tune Ripple Control operates by setting an IVALLEY level alongside the ITRIP level. When the current level reaches ITRIP, instead of entering slow decay until the tOFF time expires, the driver enters slow decay until IVALLEY is reached. Slow decay operates similar to mode 1 in which both low-side MOSFETs are turned on allowing the current to recirculate. In this mode, tOFF varies depending on the current level and operating conditions. This method allows much tighter regulation of the current level increasing motor efficiency and system performance. Smart tune Ripple Control can be used in systems that can tolerate a variable off-time regulation scheme to achieve small current ripple in the current regulation. 7.3.3.5 Blanking time After the current is enabled (start of drive phase) in an H-bridge, the current sense comparator is ignored for a period of time (tBLANK) before enabling the current-sense circuitry. The blanking time also sets the minimum drive time of the PWM. The blanking time is approximately 1 µs. 7.3.4 Charge Pump A charge pump is integrated to supply a high-side N-channel MOSFET gate-drive voltage. The charge pump requires a capacitor between the VM and VCP pins to act as the storage capacitor. Additionally a ceramic capacitor is required between the CPH and CPL pins to act as the flying capacitor. www.ti.com DRV8434E SLOSE49 – NOVEMBER 2020 Copyright © 2020 Texas Instruments Incorporated Submit Document Feedback 21 Product Folder Links: DRV8434E |
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