STPSC10C065RY datasheet(3/9 Pages) STMICROELECTRONICS

tên linh kiện	STPSC10C065RY

Giải thích chi tiết về linh kiện	Automotive 650 V power Schottky silicon carbide diode

PDF	9 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

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1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward

current (typical values, low level)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

VF(V)

IF(A)

Ta = 150 °C

Ta = 175 °C

Pulse test : tp = 500 µs

Ta = 25 °C

Ta = 100 °C

Ta = -40 °C

Figure 2. Forward voltage drop versus forward

current (typical values, high level)

100

VF(V)

IF(A)

Ta = 150 °C

Ta = 175 °C

Pulse test : tp = 500 µs

Ta = 100 °C

Ta = 25 °C

Figure 3. Reverse leakage current versus reverse

voltage applied (typical values)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

100 150 200 250 300 350 400 450 500 550 600 650

VR(V)

IR(µA)

Tj = 25 °C

Tj = 150 °C

Tj = 175 °C

Figure 4. Peak forward current versus case

temperature

100

125

150

175

TC(°C)

IM(A)

δ=tp/T

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

STPSC10C065-Y

Characteristics (curves)

DS12402 - Rev 2

page 3/9

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