STPSC10C065RY datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj from -40 °C to 175 °C

650

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Tc = 120 °C, DC current(1)

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

500

Tstg

Storage temperature range

-55 to +175

°C

Operating junction temperature(2)

-40 to +175

°C

1. Value based on Rth(j-c) max.

2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

1.3

2.0

°C/W

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

100

µA

Tj = 150 °C

425

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

1.56

1.75

Tj = 150 °C

1.98

2.50

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 500 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 1.35 x IF(AV) + 0.12 x IF2(RMS)

Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

QCj(1)

Total capacitive charge

VR = 400 V

26.4

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

480

VR = 300 V, Tc = 25 °C, F = 1 MHz

Most accurate value for the capacitive charge:

QcjVR = ∫0VRCjVdV

STPSC10C065-Y

Characteristics

DS12402 - Rev 2

page 2/9

STPSC10C065RY bảng dữ liệu(PDF) 2 Page - STMicroelectronics

STPSC10C065RY bảng dữ liệu(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

bảng dữ liệu tải về

Link URL