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FDMS3602S bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  PowerTrench짰 Power Stage 25 V Asymmetric Dual N-Channel MOSFET
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Electrical Characteristics T
J = 25°C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Symbol
Parameter
Test Conditions
Type
Min.
Typ.
Max. Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1
Q2
25
25
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
20
20
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
Q1
Q2
1
500
μA
IGSS
Gate to Source Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
Q1
Q2
100
100
nA
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1
Q2
1
1
1.8
1.9
3
3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25°C
ID = 10 mA, referenced to 25°C
Q1
Q2
-6
-5
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 14 A
VGS = 10 V, ID = 15 A, TJ = 125°C
Q1
4.4
6.2
5.9
5.6
8.1
8.7
m
Ω
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 22 A
VGS = 10 V, ID = 26 A, TJ = 125°C
Q2
1.7
2.6
2.5
2.2
3.4
3.9
gFS
Forward Transconductance
VDD = 5 V, ID = 15 A
VDD = 5 V, ID = 26 A
Q1
Q2
67
132
S
Ciss
Input Capacitance
Q1
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
1264
3097
1680
4120
pF
Coss
Output Capacitance
Q1
Q2
340
847
450
1130
pF
Crss
Reverse Transfer Capacitance
Q1
Q2
58
138
90
210
pF
Rg
Gate Resistance
Q1
Q2
0.2
0.2
0.6
0.9
2
3
Ω
td(on)
Turn-On Delay Time
Q1
VDD = 13 V, ID = 15 A, RGEN = 6 Ω
Q2
VDD = 13 V, ID = 26 A, RGEN = 6 Ω
Q1
Q2
7.9
12
16
22
ns
tr
Rise Time
Q1
Q2
2
4.2
10
10
ns
td(off)
Turn-Off Delay Time
Q1
Q2
19
31
34
50
ns
tf
Fall Time
Q1
Q2
1.8
3.2
10
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0V to 10 V
Q1
VDD = 13 V,
ID = 15 A
Q1
Q2
19
45
27
64
nC
Qg(TOT)
Total Gate Charge
VGS = 0V to 4.5 V
Q1
Q2
9
21
13
30
nC
Qgs
Gate to Source Charge
Q2
VDD = 13 V,
ID = 26 A
Q1
Q2
3.9
9.1
nC
Qgd
Gate to Drain “Miller” Charge
Q1
Q2
2.4
5.3
nC



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