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STM32F722IC bảng dữ liệu(PDF) 136 Page - STMicroelectronics

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STM32F722IC bảng dữ liệu(HTML) 136 Page - STMicroelectronics

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Electrical characteristics
STM32F722xx STM32F723xx
136/229
DS11853 Rev 6
6.3.10
Internal clock source characteristics
The parameters given in Table 42 and Table 43 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 16.
High-speed internal (HSI) RC oscillator
Figure 41. ACCHSI versus temperature
1. Guaranteed by characterization results.
Table 42. HSI oscillator characteristics (1)
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
16
-
MHz
ACCHSI
HSI user trimming step(2)
2. Guaranteed by design.
--
-
1
%
Accuracy of the HSI oscillator
TA = –40 to 105 °C(3)
3. Guaranteed by characterization results.
− 8-4.5
%
TA = –10 to 85 °C(3)
− 4-
4
%
TA = 25 °C(4)
4. Factory calibrated, parts not soldered.
− 1-
1
%
tsu(HSI)(2) HSI oscillator startup time
-
-
2.2
4
µs
IDD(HSI)(2) HSI oscillator power consumption
-
-
60
80
µA
MSv41055V1
-8
-6
-4
-2
0
2
4
6
-40
0
25
55
85
105
125
TA (°C)
Min
Max
Typical



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