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STM32F722IC bảng dữ liệu(PDF) 121 Page - STMicroelectronics

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STM32F722IC bảng dữ liệu(HTML) 121 Page - STMicroelectronics

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DS11853 Rev 6
121/229
STM32F722xx STM32F723xx
Electrical characteristics
201
Table 33. Typical and maximum current consumptions in VBAT mode
Symbol
Parameter
Conditions(1)
Typ
Max(2)
Unit
TA =25 °C
TA =85 °C TA =105 °C
VBAT =
1.7 V
VBAT=
2.4 V
VBAT=
3.3 V
VBAT = 3.6 V
IDD_VBAT
Supply current
in VBAT mode
Backup SRAM OFF, RTC and
LSE OFF
0.035
0.037
0.043
4
10
µA
Backup SRAM ON, RTC and
LSE OFF
0.69
0.71
0.73
9
20
Backup SRAM OFF, RTC ON
and LSE in low drive mode
0.57
0.74
1.05
98
244
Backup SRAM OFF, RTC ON
and LSE in medium low drive
mode
0.59
0.76
1.08
101
251
Backup SRAM OFF, RTC ON
and LSE in medium high drive
mode
0.69
0.86
1.19
111
277
Backup SRAM OFF, RTC ON
and LSE in high drive mode
0.8
0.98
1.31
122
305
Backup SRAM ON, RTC ON and
LSE in low drive mode
1.22
1.41
1.74
162
405
Backup SRAM ON, RTC ON and
LSE in Medium low drive mode
1.25
1.43
1.78
166
414
Backup SRAM ON, RTC ON and
LSE in Medium high drive mode
1.46
1.65
2.01
187
468
Backup SRAM ON, RTC ON and
LSE in High drive mode
1.46
1.65
2.01
187
468
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed by characterization results.



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