2SJ635. datasheet(2/7 Pages) VBSEMI

2 / 7 page

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise note)

Parameter

Symbol

Test Conditions

Min .

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 µA

- 60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 60 V, VGS = 0 V, TJ = 150 ° C

- 125

On-State Drain Currenta

ID(on)

VDS  - 5 V, VGS = - 10 V

- 30

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 10 A

0.053

0.060



VGS = - 10 V, ID = - 10 A, TJ = 125 °C

0.102

VGS = - 10 V, ID = - 10 A, TJ = 150 °C

0.120

VGS = - 4.5 V, ID = - 5 A

0.062

0.070

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 10 A

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

1140

1710

Output Capacitance

Coss

130

Reverse Transfer Capacitance

Crss

Total Gate Chargec

VDS = - 30 V, VGS = - 10 V, ID = - 10 A

Gate-Source Chargec

Qgs

4.5

Gate-Drain Chargec

Qgd

Gate Resistance

f = 1 MHz



Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 3 

ID  - 19 A, VGEN = - 10 V, Rg = 2.5 

815

Rise Timec

915

Turn-Off Delay Timec

td(off)

100

Fall Timec

Drain-Source Body Diode and Characteristics (TC = 25 °C)

Continuous Current

- 30

Pulsed Current

ISM

- 30

Forward Voltagea

VSD

IF = - 19 A, VGS = 0 V

- 1

- 1.5

Reverse Recovery Time

trr

IF = - 19 A, di/dt = 100 A/µs

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