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LP1115 bảng dữ liệu(PDF) 5 Page - Lowpower Semiconductor inc |
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LP1115 bảng dữ liệu(HTML) 5 Page - Lowpower Semiconductor inc |
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5 / 10 page  LP1115-01 Dec.-2019 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 5 of 10 Preliminary Datasheet LP1115 Electrical Characteristics (TA=25℃, VIN = 5V, unless otherwise noted.) Full Bridge Driver Characteristic Symbol Condition Min Typ Max Unit Supply Voltage Range VCC − 4.3 − 13.2 V Supply Current ISYS VBST = 12V, VIN = 0V, VEN=0V − 0.7 − mA EN Input Voltage High VEN_HI − 2.0 − − V EN Input Voltage Low VEN_LO − − − 0.8 V EN Hysteresis − − 300 − mV EN Input Current No internal pull-up or pull-down resistors −1.0 − +1.0 μA PWM Input Voltage High VPWM_HI − 2.0 − − V PWM Input Voltage Low VPWM_LO − − − 0.8 V PWM Hysteresis − − − 300 − mV PWM Input Current − No internal pull-up or pull-down resistors −1.0 − +1.0 μA High-Side Driver Output Resistance, Sourcing Current − VBST − VSW = 12 V − 3.3 - Ω Output Resistance, Sinking Current − VBST − VSW = 12 V − 0.5 - Ω Output Resistance, Unbiased − VBST − VSW = 0 V − 15 - kΩ Transition Times TrDRVH VBST − VSW = 12 V, CLOAD = 3.0 nF (See Figure 2) − 30 - ns TfDRVH 12 - ns Propagation Delay Times TpdhDRVH VBST − VSW = 12 V, CLOAD = 3.0 nF (See Figure 2) - 95 - ns TpdlDRVH VBST − VSW = 12 V, CLOAD = 3.0 nF (See Figure 2) 15 - ns TpdlEN (See Figure 1) 30 - ns TpdhEN (See Figure 1) 35 - ns SW Pull down Resistance − VSW = GND − 15 − kΩ Low-Side Driver Output Resistance, Sourcing Current − − 3.3 - Ω Output Resistance, Sinking Current − − 0.5 − Ω Output Resistance, Unbiased − VCC = GND − 15 − kΩ Transition Times TrDRVL CLOAD = 3.0 nF, (See Figure 2) − 30 - ns TfDRVL 12 - ns Propagation Delay Times TpdhDRVL CLOAD = 3.0 nF, (See Figure 2) − 105 - ns TpdlDRVL - 15 - ns TpdlEN (See Figure 1) - 30 - ns TpdhEN (See Figure 1) - 35 - ns Timeout Delay − VDRVH − VSW = 0 − 110 − ns UVLO Startup − − - 4.2 - V UVLO Shutdown − − - 3.8 - V UVLO Hysteresis − − - 0.3 - V |
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