HX6228KBHT datasheet(9/12 Pages) HONEYWELL

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HX6228

TESTER AC TIMING CHARACTERISTICS

QUALITY AND RADIATIONHARDNESS

ASSURANCE

Honeywell maintains a high level of product integrity through

process control, utilizing statistical process control, a com-

plete “Total Quality Assurance System,” a computer data

base process performance tracking system, and a radia-

tion hardness assurance strategy.

The radiation hardness assurance strategy starts with a

technology that is resistant to the effects of radiation.

Radiation hardness is assured on every wafer by irradiat-

ing test structures as well as SRAM product, and then

monitoring key parameters which are sensitive to ionizing

radiation. Conventional MIL-STD-883 TM 5005 Group E

testing, which includes total dose exposure with Cobalt 60,

may also be performed as required. This Total Quality

approach ensures our customers of a reliable product by

engineering in reliability, starting with process develop-

ment and continuing through product qualification and

screening.

SCREENING LEVELS

Honeywell offers several levels of device screening to

meet your system needs. “Engineering Devices” are avail-

able with limited performance and screening for bread-

boarding and/or evaluation testing. Hi-Rel Level B and S

devices undergo additional screening per the require-

ments of MIL-STD-883. As a QML supplier, Honeywell

also offers QML Class Q and V devices per MIL-PRF-

38535 and are available per the applicable Standard

Microcircuits Drawing (SMD). QML devices offer ease of

procurement by eliminating the need to create detailed

specifications and offer benefits of improved quality and

cost savings through standardization.

RELIABILITY

Honeywell understands the stringent reliability require-

ments that space and defense systems require and has

extensive experience in reliability testing on programs of

this nature. This experience is derived from comprehen-

sive testing of VLSI processes. Reliability attributes of the

RICMOS™ process were characterized by testing spe-

cially designed irradiated and non-irradiated test struc-

tures from which specific failure mechanisms were evalu-

ated. These specific mechanisms included, but were not

limited to, hot carriers, electromigration and time depend-

ent dielectric breakdown. This data was then used to make

changes to the design models and process to ensure more

reliable products.

In addition, the reliability of the RICMOS™ process and

product in a military environment was monitored by testing

irradiated and non-irradiated circuits in accelerated dy-

namic life test conditions. Packages are qualified for prod-

uct use after undergoing Groups B & D testing as outlined

in MIL-STD-883, TM 5005, Class S. The product is quali-

fied by following a screening and testing flow to meet the

customer’s requirements. Quality conformance testing is

performed as an option on all production lots to ensure the

ongoing reliability of the product.

High Z = 2.9V

3 V

0 V

1.5 V

VDD-0.5 V

0.5 V

VDD/2

1.5 V

VDD-0.4V

0.4 V

High Z

3.4 V

2.4 V

High Z

VDD/2

0.4 V

High Z

3.4 V

2.4 V

High Z

TTL I/O Configuration

Input

Levels*

Output

Sense

Levels

CMOS I/O Configuration

High Z = 2.9V

* Input rise and fall times <1 ns/V

VDD-0.4V

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