DN3135 datasheet(3/12 Pages) MICROCHIP

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AC ELECTRICAL CHARACTERISTICS 2

Electrical Specifications: Unless otherwise specified, for all specifications TA =TJ = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Forward Transconductance

GFS

140

—

mmho VDS = 10V, ID = 100 mA

Input Capacitance

CISS

—

120

VGS = –5V, 

VDS = 25V,



f = 1 MHz

Common Source Output

Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-on Delay Time

td(ON)

—

VDD = 25V, 

ID = 150 mA,



RGEN = 25Ω, 

VGS = 0V to –10V

Rise Time

—

Turn-off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

1.8

VGS = –5V, ISD = 150 mA

(Note 1)

Reverse Recovery Time

trr

—

800

—

VGS = –5V, ISD = 150 mA

(Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

SOT-23

JA

—

203

—

°C/W

SOT-89

JA

—

133

—

°C/W

THERMAL CHARACTERISTICS

Package

ID( 1)

(Continuous)

(mA)

(Pulsed)

(mA)

Power Dissipation at

TA = 25°C

(W)

IDR( 1)

(mA)

IDRM

(mA)

SOT-23

300

0.36

300

SOT-89

135

300

1.3( 2)

135

300

Note 1: ID (continuous) is limited by maximum TJ.

2: Mounted on FR4 board, 25 mm x 25 mm x 1.57 mm

 2017 Microchip Technology Inc.

DS20005703A-page 3

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