DN2625 datasheet(2/14 Pages) MICROCHIP

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DN2625

DS20005537B-page 2

 2017 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings†

Drain-to-source Voltage ....................................................................................................................................... BVDSX

Drain-to-gate Voltage .......................................................................................................................................... BVDGX

Gate-to-source Voltage ......................................................................................................................................... ±20V

Operating Ambient Temperature, TA ..................................................................................................... –55°C to 150°C

Storage Temperature, TS ....................................................................................................................... –55°C to 150°C

Soldering Temperature (Note 1) ........................................................................................................................... 300°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

Note 1: Distance of 1.6 mm from case for 10 seconds

DC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, TA = 25°C. (Note 1)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Drain-to-source Breakdown Voltage

BVDSX

250

—

VGS = –2.5V, ID = 50 µA

Drain-to-gate Breakdown Voltage

BVDGX

250

—

VGS = –2.5V, ID = 50 µA

Gate-to-source Off Voltage

VGS(OFF)

–1.5

—

–2.1

VDS = 15V, ID = 100 µA

Change in VGS(OFF)

with Temperature

∆VGS(OFF)

—

–4.5

mV/°C VDS = 15V, ID = 100 µA (Note 2)

Gate Body Leakage Current

IGSS

—

100

VGS = ±20V, VDS = 0V

Drain-to-source Leakage Current

ID(OFF)

—

µA

VDS = 250V, VGS = –5V

—

200

VDS = 250V, VGS = –5V,



TA = 125°C (Note 2)

Saturated Drain-to-source Current

IDSS

1.1

—

VGS = 0V, VDS = 15V

Pulsed Drain-to-source Current

IDS(PULSE)

3.1

3.3

—

VGS = 0.9V, VDS = 15V

(With duty cycle of 1%)

Static Drain-to-source On-resistance

RDS(ON)

—

3.5

Ω

VGS = 0V, ID = 1A

Change in RDS(ON) with

Temperature

∆RDS(ON)

—

1.1

%/°C

VGS = –0V, ID = 200 mA (Note 2)

Note 1: Unless otherwise stated, all DC parameters are 100% tested at +25°C. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

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