PJM2324NSA datasheet(2/6 Pages) PJSEMI

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PJM2324NSA

N- Enhancement Mode Field Effect Transistor

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250μA

100

Gate Leakage Current

IGSS

VDS = 0V, VGS = ±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS =100V, VGS =0V

μA

Gate Threshold Voltage Note3

VGS(th)

VDS = VGS, ID = 250μA

1.2

2.8

Drain-Source On-Resistance Note3

RDS(ON)

VGS = 10V, ID =1.5A

234

mΩ

VGS =4.5V, ID =0.5A

278

Forward transconductance Note3

gfs

VDS = 20V, ID = 1.5A

Dynamic Characteristics

Input Capacitance

Ciss

VDS = 50V, VGS = 0V, f = 1MHz

190

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-On Delay Time

td(on)

VDD=50V, VGEN=4.5V,

RL=39Ω, RG=1Ω, ID=1.3A

Turn-On Rise Time

Turn-Off DelayTime

td(off)

Turn-Off FallTime

Total Gate Charge

VDS=50V,VGS =4.5V,ID=1.6A

5.8

Gate-Source Charge

Qgs

0.75

Gate-Drain Charge

Qgd

1.4

Forward Diode Voltage Note2

VSD

VGS = 0V, IS = 1.3A

1.2

Notes:1. Repetitive rating: Pluse width limited by junction temperature.

3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%.

2 / 6

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Revision：1.0 Sep-2018

Static Characteristics

Source-Drain Diode Characteristics

Electrical Characteristics (TA=25℃ unless otherwise noted)

2. Surface mounted on FR4 board，t ≦ 10 sec.

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